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Showing results 1 to 6 of 6

Issue Date	Title	Author(s)
2019	Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis	Dao Dinh Ha; Trung Tran Tuan; Volcheck, V. S.; Stempitsky, V. R.
2019	Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis	Volcheck, V. S.; Stempitsky, V. R.
2019	Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysis	Volcheck, V. S.; Stempitsky, V. R.
2019	Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation	Lovshenko, I. Yu.; Khanko, V. T.; Stempitsky, V. R.
2016	Трехмерное моделирование выходных характеристик GaAs транзисторов с субмикронной длиной затвора	Мищенко, В. Н.
2017	Экспериментальное исследование деградации изделий электронной техники	Боровиков, С. М.; Шнейдеров, Е. Н.; Плебанович, В. И.; Бересневич, А. И.; Бурак, И. А.

Showing results 1 to 6 of 6