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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/38541
Title: Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation
Authors: Lovshenko, I. Yu.
Khanko, V. T.
Stempitsky, V. R.
Keywords: публикации ученых;JFET;SPICE;transistor;simulation;radiation
Issue Date: 2019
Publisher: EDP Sciences, France
Citation: Lovshenko, I. Yu. Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation / Lovshenko I. Yu., Khanko V. T., Stempitsky V. R. // Microwave & Telecommunication Technology: 29th International Crimean Conference. – 2019. – №30. – P. 10002. – DOI: https://doi.org/10.1051/itmconf/20193010002.
Abstract: The results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separate exposure to fluences of electrons, protons and neutrons are presented.
URI: https://libeldoc.bsuir.by/handle/123456789/38541
Appears in Collections:Публикации в зарубежных изданиях

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