|Title:||Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation|
|Authors:||Lovshenko, I. Yu.|
Khanko, V. T.
Stempitsky, V. R.
|Publisher:||EDP Sciences, France|
|Citation:||Lovshenko, I. Yu. Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation / Lovshenko I. Yu., Khanko V. T., Stempitsky V. R. // Microwave & Telecommunication Technology: 29th International Crimean Conference. – 2019. – №30. – P. 10002. – DOI: https://doi.org/10.1051/itmconf/20193010002.|
|Abstract:||The results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separate exposure to fluences of electrons, protons and neutrons are presented.|
|Appears in Collections:||Публикации в зарубежных изданиях|
|Lovshenko_Physic_topological.pdf||1.8 MB||Adobe PDF||View/Open|
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