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Issue Date	Title	Author(s)
2020	GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulations	Baranava, M. S.; Hvazdouski, D. C.; Volcheck, V. S.; Stempitsky, V. R.; Dinh, D.; Tran Tuan, T.
2019	Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis	Dao Dinh Ha; Trung Tran Tuan; Volcheck, V. S.; Stempitsky, V. R.
2022	Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal System	Volcheck, V. S.; Stempitsky, V. R.
2019	Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model	Volcheck, V. S.; Stempitsky, V. R.
2019	Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis	Volcheck, V. S.; Stempitsky, V. R.
2019	Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysis	Volcheck, V. S.; Stempitsky, V. R.
2021	Temperature dependence of the thermal conductivity of wurtzite aluminum nitride, gallium nitride and aluminum-gallium nitride	Volcheck, V. S.; Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.
2022	Thermal conductivity of wurtzite gallium nitride	Volcheck, V. S.; Baranava, M. S.; Stempitsky, V. R.

Showing results 2 to 9 of 9 < previous