GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulations

Abstract

GaN HEMT thermal characteristics evaluation using computer calculation has been carry out. Calculation were using an proposed integrated approach based on the combined use of first-principles and device simulations. Such method is necessary when some parameters for device simulation are impossible is obtained due different reasons. Thermal conductivity is one of the input parameters of the heat flow equation and is known to be strongly temperature-dependent. This is critical to take into account during simulation, as the developed temperature due to self-heating is very sensitive to thermal conductivities of certain areas of the device.