|Title:||GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulations|
|Authors:||Baranava, M. S.|
Hvazdouski, D. C.
Volcheck, V. S.
Stempitsky, V. R.
Tran Tuan, T.
|Keywords:||публикации ученых;thermal conductivity;first-principles calculations;device simulation|
|Publisher:||EDAS Conference Services LLC|
|Citation:||GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulations / M. Baranаva [et. al.] // IEEE ATC 2020 : International Conference on Advanced Technologies for Communications, Nha Trang, 8–10 October 2020 / IEEE Communications Society. – Nha Trang, 2020. – P. 65–69. – DOI: 10.1109/ATC50776.2020.9255446.|
|Abstract:||GaN HEMT thermal characteristics evaluation using computer calculation has been carry out. Calculation were using an proposed integrated approach based on the combined use of first-principles and device simulations. Such method is necessary when some parameters for device simulation are impossible is obtained due different reasons. Thermal conductivity is one of the input parameters of the heat flow equation and is known to be strongly temperature-dependent. This is critical to take into account during simulation, as the developed temperature due to self-heating is very sensitive to thermal conductivities of certain areas of the device.|
|Appears in Collections:||Публикации в зарубежных изданиях|
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