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Issue Date	Title	Author(s)
2025	Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer	Yinchi Liu; Xun Lu; Shiyu Li; Hao Zhang; Jining Yang; Yeye Guo; Golosov, D. A.; Chenjie Gu; Hongliang Lu; Zhigang Ji; Shijin Ding; Wenjun Liu

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