Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer

Abstract

The ferroelectric field-effect transistor (FeFET) with an amorphous indium–gallium–zinc oxide ( -IGZO) channel and an atomic-layer-deposited 2 nm HfO2 interfacial layer (IL) was designed and fabricated to optimize both memory window (MW) and reliability. Compared with the FeFET without IL, the FeFET with 2 nm HfO2 IL achieved an enhanced MW of 1.1 V at a reliable operating voltage with ultrafast current-voltage operation and an approximately 1000 times improvement in endurance with an available MW of ∼0.85 V after exerting pulses over 107 cycles while maintaining retention of over 10 years. This work proposes an effective strategy to enhance MW and reliability for future nonvolatile memory applications.