Skip navigation

Browsing by Author Volcheck, V. S.

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
А Б В Г Д Е Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я
or enter first few letters:  
Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
2021Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal systemVolcheck, V. S.; Lovshenko, I. Yu.; Stempitsky, V. R.
2020GaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device SimulationsBaranava, M. S.; Hvazdouski, D. C.; Volcheck, V. S.; Stempitsky, V. R.; Dinh, D.; Tran Tuan, T.
2019Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysisDao Dinh Ha; Trung Tran Tuan; Volcheck, V. S.; Stempitsky, V. R.
2022Large Signal Performance of The Gallium Nitride Heterostructure Field-Effect Transistor with a Graphene Heat-Removal SystemVolcheck, V. S.; Stempitsky, V. R.
2019Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling modelVolcheck, V. S.; Stempitsky, V. R.
2019Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2019Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysisVolcheck, V. S.; Stempitsky, V. R.
2021Temperature dependence of the thermal conductivity of wurtzite aluminum nitride, gallium nitride and aluminum-gallium nitrideVolcheck, V. S.; Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.