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Title: Negative differential resistance in n-type noncompensated silicon at low temperature
Authors: Prischepa, S. L.
Danilyuk, A. L.
Trafimenko, A. G.
Fedotov, A. K.
Svito, I. A.
Прищепа, С. Л.
Данилюк, А. Л.
Keywords: публикации ученых;negative differential resistance;variable range hopping;charge accumulation;upper Hubbard band
Issue Date: 2016
Publisher: American Institute of Physics
Citation: Prischepa S. L. Negative differential resistance in n-type noncompensated silicon at low temperature / S. L. Prischepa, A. L. Danilyuk, A. G. Trafimenko, A. K. Fedotov, I. A. Svito // Applied Physics Letters. - Vol. 109, No. 22. - 2016 - P. 222104 (1-4).
Abstract: We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D- states in the upper Hubbard band due to the accumulation of the charge injected by current.
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