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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/10856
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dc.contributor.authorBalucani, M.-
dc.contributor.authorBondarenko, V. P.-
dc.contributor.authorFranchina, L.-
dc.contributor.authorLamedica, G.-
dc.contributor.authorYakovtseva, V. A.-
dc.contributor.authorFerrari, A.-
dc.date.accessioned2016-12-14T12:17:51Z-
dc.date.accessioned2017-07-27T12:27:35Z-
dc.date.available2016-12-14T12:17:51Z-
dc.date.available2017-07-27T12:27:35Z-
dc.date.issued1999-
dc.identifier.citationA model of radiative recombination in n-type porous silicon-aluminum Schottky junction / M. Balucani and others // Applied Physics Letters. - 1999. - Vol. 74. - Issue 14 . - P. 1960. - DOI: http://dx.doi.org/10.1063/1.123741ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/10856-
dc.description.abstractIt is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon.ru_RU
dc.language.isoenru_RU
dc.publisherAmerican Institute of Physics; USAru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectSchottky barriersru_RU
dc.subjectP-N junctionsru_RU
dc.subjectSiliconru_RU
dc.subjectLuminescenceru_RU
dc.subjectLight emitting diodesru_RU
dc.titleA model of radiative recombination in n-type porous silicon-aluminum Schottky junctionru_RU
dc.typeArticleru_RU
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