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dc.contributor.authorBalucani, M.-
dc.contributor.authorBondarenko, V. P.-
dc.contributor.authorFranchina, L.-
dc.contributor.authorLamedica, G.-
dc.contributor.authorYakovtseva, V. A.-
dc.contributor.authorFerrari, A.-
dc.identifier.citationA model of radiative recombination in n-type porous silicon-aluminum Schottky junction / M. Balucani and others // Applied Physics Letters. - 1999. - Vol. 74. - Issue 14 . - P. 1960. - DOI:
dc.description.abstractIt is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon.ru_RU
dc.publisherAmerican Institute of Physics; USAru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectSchottky barriersru_RU
dc.subjectP-N junctionsru_RU
dc.subjectLight emitting diodesru_RU
dc.titleA model of radiative recombination in n-type porous silicon-aluminum Schottky junctionru_RU
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