https://libeldoc.bsuir.by/handle/123456789/10856| Title: | A model of radiative recombination in n-type porous silicon-aluminum Schottky junction |
| Authors: | Balucani, M. Bondarenko, V. P. Franchina, L. Lamedica, G. Yakovtseva, V. A. Ferrari, A. |
| Keywords: | публикации ученых;Schottky barriers;P-N junctions;Silicon;Luminescence;Light emitting diodes |
| Issue Date: | 1999 |
| Publisher: | American Institute of Physics |
| Citation: | A model of radiative recombination in n-type porous silicon-aluminum Schottky junction / M. Balucani and others // Applied Physics Letters. - 1999. - Vol. 74. - Issue 14 . - P. 1960. - DOI: http://dx.doi.org/10.1063/1.123741 |
| Abstract: | It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/10856 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| A model of radiative recombination.docx | 15.51 kB | Microsoft Word XML | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.