Investigation of Influence of Cleanliness of the Surface Substrate on Formation and Transformation of Silicon-Germanium Nanoclusters

Abstract

Established that the degree surface perfection to be seen as an essential part of the general task of preparing a clean surface before the process of formation of SiGe nanoclusters and the suppression of their transformation from nanoscale to microsizes. A small displacement of the surface atoms of complex structures on a clean surface with the formation of bonds of Ge -Ge or Si- Si is beneficial for self-organization of nanoclusters SiGe.