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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/11062
Title: Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate
Authors: Golosov, D. A.
Zavadski, S. M.
Kolos, V. V.
Turtsevich, A. S.
Okodzhi, D. E.
Keywords: публикации ученых;thin films;niobium-doped strontium–bismuth tantalate;ferroelectric properties;magnetron sputtering
Issue Date: 2016
Publisher: Pleiades Publishing
Citation: Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate / D. A. Golosov and other // Russian Microelectronics. - 2016. - Vol. 45, № 1. - Р.11–17.
Abstract: Characteristics of ferroelectric thin films of nio-bium-doped strontium–bismuth tantalite (SBTN), which were deposited by magnetron sputtering on Pt/TiO2/SiO2/Si substrates, are investigated. To form the ferroelectric structure, deposited films were subjected to subsequent annealing at 700–800°C in an O2 atmosphere. The results of X-ray diffraction showed that the films immediately after the deposition have an amorphous structure. Annealing at 700–800°C results in the formation of the Aurivillius struc-ture. The dependences of permittivity, residual polariza-tion, and the coercitivity of SBTN films on the modes of subsequent annealing are established. Films with residual polarization 2Pr = 9.2 μC/cm2, coercitivity 2Ec = 157 kV/cm, and leakage current 10–6 A/cm2 are obtained at the annealing temperature of 800°C. The dielectric constant and loss tangent at fre-quency of 1.0 MHz were ε = 152 and tanδ = 0.06. The ferroelectric characteristics allow us to use the SBTN films in the capacitor cell of high density ferroelectric random-access non-volatile memory (FeRAM).
URI: https://libeldoc.bsuir.by/handle/123456789/11062
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