| DC Field | Value | Language |
|---|
| dc.contributor.author | Yakovtseva, V. A. | - |
| dc.contributor.author | Vorozov, N. | - |
| dc.contributor.author | Dolgyi, L. | - |
| dc.contributor.author | Levchenko, V. | - |
| dc.contributor.author | Postnova, L. | - |
| dc.contributor.author | Balucani, M. | - |
| dc.contributor.author | Bondarenko, V. P. | - |
| dc.contributor.author | Lamedica, G. | - |
| dc.contributor.author | Ferrari, A. | - |
| dc.date.accessioned | 2017-01-19T15:56:29Z | - |
| dc.date.accessioned | 2017-07-27T12:15:10Z | - |
| dc.date.available | 2017-01-19T15:56:29Z | - |
| dc.date.available | 2017-07-27T12:15:10Z | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | Yakovtseva, V. Porous silicon: a buffer layer for PbS heteroepitaxy / V. Yakovtseva and others // Physica Status Solidi. – 2000. - Vol.182. - №195. - P.195 - 199. - DOI: 10.1002/1521-396X(200011)182:1<195::AID-PSSA195>3.0.CO;2-G. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/11370 | - |
| dc.description.abstract | In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n+-type silicon (111) substrate. The films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer layer on the structure and properties of PbS epitaxial films was supported by implementation of sensitive Schottky-barrier photodiodes fabricated in these films. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | porous silicon | ru_RU |
| dc.title | Porous silicon: a buffer layer for PbS heteroepitaxy | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
