https://libeldoc.bsuir.by/handle/123456789/11370| Title: | Porous silicon: a buffer layer for PbS heteroepitaxy |
| Authors: | Yakovtseva, V. A. Vorozov, N. Dolgyi, L. Levchenko, V. Postnova, L. Balucani, M. Bondarenko, V. P. Lamedica, G. Ferrari, A. |
| Keywords: | публикации ученых;porous silicon |
| Issue Date: | 2000 |
| Publisher: | WILEY-VCH Verlag GmbH & Co. KGaA |
| Citation: | Yakovtseva, V. Porous silicon: a buffer layer for PbS heteroepitaxy / V. Yakovtseva and others // Physica Status Solidi. – 2000. - Vol.182. - №195. - P.195 - 199. - DOI: 10.1002/1521-396X(200011)182:1<195::AID-PSSA195>3.0.CO;2-G. |
| Abstract: | In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n+-type silicon (111) substrate. The films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer layer on the structure and properties of PbS epitaxial films was supported by implementation of sensitive Schottky-barrier photodiodes fabricated in these films. |
| URI: | https://libeldoc.bsuir.by/handle/123456789/11370 |
| Appears in Collections: | Публикации в зарубежных изданиях |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Porous Silicon.docx | 15.67 kB | Microsoft Word XML | View/Open |
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