Skip navigation
Please use this identifier to cite or link to this item:
Title: Porous silicon: a buffer layer for PbS heteroepitaxy
Authors: Yakovtseva, V. A.
Vorozov, N.
Dolgyi, L.
Levchenko, V.
Postnova, L.
Balucani, M.
Bondarenko, V. P.
Lamedica, G.
Ferrari, A.
Keywords: публикации ученых;porous silicon
Issue Date: 2000
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA
Citation: Yakovtseva, V. Porous silicon: a buffer layer for PbS heteroepitaxy / V. Yakovtseva and others // Physica Status Solidi. – 2000. - Vol.182. - №195. - P.195 - 199. - DOI: 10.1002/1521-396X(200011)182:1<195::AID-PSSA195>3.0.CO;2-G.
Abstract: In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n+-type silicon (111) substrate. The films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer layer on the structure and properties of PbS epitaxial films was supported by implementation of sensitive Schottky-barrier photodiodes fabricated in these films.
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Porous Silicon.docx15.67 kBMicrosoft Word XMLView/Open
Show full item record

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.