| DC Field | Value | Language |
|---|
| dc.contributor.author | Balucani, M. | - |
| dc.contributor.author | Bondarenko, V. P. | - |
| dc.contributor.author | Lamedica, G. | - |
| dc.contributor.author | Ferrari, A. | - |
| dc.contributor.author | Yakovtseva, V. A. | - |
| dc.contributor.author | Dolgyi, L. | - |
| dc.contributor.author | Vorozov, N. | - |
| dc.contributor.author | Volchek, S. A. | - |
| dc.contributor.author | Petrovich, V. A. | - |
| dc.contributor.author | Kazuchits, N. | - |
| dc.date.accessioned | 2017-01-20T09:32:37Z | - |
| dc.date.accessioned | 2017-07-27T12:23:19Z | - |
| dc.date.available | 2017-01-20T09:32:37Z | - |
| dc.date.available | 2017-07-27T12:23:19Z | - |
| dc.date.issued | 2001 | - |
| dc.identifier.citation | Balucani, M. Er-doped oxidized porous silicon waveguides / M. Balucani and others // Thin Solid Films. – 2001. - Vol. 396. - P. 201 – 203. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/11383 | - |
| dc.description.abstract | The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n+-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO3)3 aqueous solution. A correlation between Er concentration and refractive index profiles has shown dominant core doping with Er relative to cladding regions. Reported Er concentration of 0.8 at.% in the OPSWG is large enough to attain the amplification effect. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Elsevier | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | erbium | ru_RU |
| dc.subject | porous silicon | ru_RU |
| dc.subject | optoelectronic devices | ru_RU |
| dc.title | Er-doped oxidized porous silicon waveguides | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
