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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/11389
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dc.contributor.authorYakovtseva, V. A.-
dc.contributor.authorDolgyi, L.-
dc.contributor.authorKazuchits, N.-
dc.contributor.authorVorozov, N.-
dc.contributor.authorBalucani, M.-
dc.contributor.authorBondarenko, V. P.-
dc.contributor.authorFranchina, L.-
dc.contributor.authorLamedica, G.-
dc.contributor.authorFerrari, A.-
dc.date.accessioned2017-01-20T12:02:17Z-
dc.date.accessioned2017-07-27T12:23:19Z-
dc.date.available2017-01-20T12:02:17Z-
dc.date.available2017-07-27T12:23:19Z-
dc.date.issued2000-
dc.identifier.citationYakovtseva, V. Oxidized porous silicon: from dielectric isolation to integrated optical waveguides / V. Yakovtseva and others // Journal of Porous Materials. - 2000. - Vol. 7 (1). - Pp. 215-222. - DOI: 10.1023/A:1009647007232.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/11389-
dc.description.abstractA brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon (PS) layers, special features of PS chemical cleaning and thermal oxidation are discussed. OPS application for dielectric isolation of components of bipolar ICs and for the formation of silicon-on-insulator structures has been demonstrated. Although these OPS-based techniques have found limited current commercial use, experience gained is applicable to the fabrication of optoelectronic devices. Specifically, integrated optical waveguides based on OPS have been developed.ru_RU
dc.language.isoenru_RU
dc.publisherKluwer Academic Publishers USAru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectoxidized porous siliconru_RU
dc.subjectanodizationru_RU
dc.subjectoxidationru_RU
dc.subjectdielectric isolationru_RU
dc.subjectoptical waveguideru_RU
dc.titleOxidized porous silicon: from dielectric isolation to integrated optical waveguidesru_RU
dc.typeArticleru_RU
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