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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/11410
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dc.contributor.authorLamedica, G.-
dc.contributor.authorBalucani, M.-
dc.contributor.authorBondarenko, V. P.-
dc.contributor.authorFranchina, L.-
dc.contributor.authorDolgyi, L.-
dc.contributor.authorYakovtseva, V. A.-
dc.contributor.authorFerrari, A.-
dc.date.accessioned2017-01-23T09:00:57Z-
dc.date.accessioned2017-07-27T12:25:04Z-
dc.date.available2017-01-23T09:00:57Z-
dc.date.available2017-07-27T12:25:04Z-
dc.date.issued2000-
dc.identifier.citationLamedica, G. Investigation of Morphology of Porous Silicon Formed on N+ Type Silicon / G. Lamedica and others // Journal of Porous Materials. – 2000. - Vol. 7 (1). - Рp. 23 – 26. - DOI: 10.1023/A:1009627412800.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/11410-
dc.description.abstractThe properties of porous silicon (PS) are closely connected to its morphology, much investigation has been done in order to correlate the morphological characteristics of PS with the anodisation parameters. In this paper the results of morphological analysis of PS formed on N+type substrates of 〈1 0 0〉 and 〈1 1 1〉 orientation are presented. The dependences of the porosity, thickness of PS, density of pores and of the effective surface on the current density are obtained. Interpretation of these results in terms of diffusion layer and energy levels is given, with special attention given to the low current density case.ru_RU
dc.language.isoenru_RU
dc.publisherKluwer Academic Publishers, USAru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectporous siliconru_RU
dc.subjectmorphologyru_RU
dc.subjectmechanism of growthru_RU
dc.titleInvestigation of Morphology of Porous Silicon Formed on N+ Type Siliconru_RU
dc.typeArticleru_RU
Appears in Collections:Публикации в зарубежных изданиях

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