| DC Field | Value | Language |
|---|
| dc.contributor.author | Solodukha, V. A. | - |
| dc.contributor.author | Shvedov, S. V. | - |
| dc.contributor.author | Chyhir, R. R. | - |
| dc.contributor.author | Petlitsky, A. N. | - |
| dc.date.accessioned | 2017-12-20T08:28:09Z | - |
| dc.date.available | 2017-12-20T08:28:09Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Depth Measurement of Nanoscale Damage to the Surface of Silicon Wafers in the Production of Submicron Integrated Microcircuits by Auger Spectroscopy Method / V. A. Solodukha and other // Proceedings of the 2017 IEEE 7th International Conference on Nanomaterials: Applications & Properties (NAP-2017)(September 10 – 15, 2017). – Zatoka: Sumy Sumy State University, 2017. – Р. 1 – 4. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/28808 | - |
| dc.description.abstract | The proposed method of depth control of the damaged layer of the polished wafers, based on application of Auger spectroscopy with the precision sputtering of the surface silicon layers and registration of the Auger electrons yield intensity from the wafer surface. The method makes it possible to perform the efficient depth control of the damaged layer and thus ensures the reliable control under the production conditions. The depth measurement range of the damaged layer constitutes 0,001–1 um. Resolution by depth is 1 nm. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Sumy Sumy State University | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | polished wafers | ru_RU |
| dc.subject | damaged layer | ru_RU |
| dc.subject | Auger electron | ru_RU |
| dc.subject | depth of the damaged layer formattin | ru_RU |
| dc.title | Depth Measurement of Nanoscale Damage to the Surface of Silicon Wafers in the Production of Submicron Integrated Microcircuits by Auger Spectroscopy Method | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
