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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/28808
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dc.contributor.authorSolodukha, V. A.-
dc.contributor.authorShvedov, S. V.-
dc.contributor.authorChyhir, R. R.-
dc.contributor.authorPetlitsky, A. N.-
dc.date.accessioned2017-12-20T08:28:09Z-
dc.date.available2017-12-20T08:28:09Z-
dc.date.issued2017-
dc.identifier.citationDepth Measurement of Nanoscale Damage to the Surface of Silicon Wafers in the Production of Submicron Integrated Microcircuits by Auger Spectroscopy Method / V. A. Solodukha and other // Proceedings of the 2017 IEEE 7th International Conference on Nanomaterials: Applications & Properties (NAP-2017)(September 10 – 15, 2017). – Zatoka: Sumy Sumy State University, 2017. – Р. 1 – 4.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/28808-
dc.description.abstractThe proposed method of depth control of the damaged layer of the polished wafers, based on application of Auger spectroscopy with the precision sputtering of the surface silicon layers and registration of the Auger electrons yield intensity from the wafer surface. The method makes it possible to perform the efficient depth control of the damaged layer and thus ensures the reliable control under the production conditions. The depth measurement range of the damaged layer constitutes 0,001–1 um. Resolution by depth is 1 nm.ru_RU
dc.language.isoenru_RU
dc.publisherSumy Sumy State University, Zatoka, Ukraineru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectpolished wafersru_RU
dc.subjectdamaged layerru_RU
dc.subjectAuger electronru_RU
dc.subjectdepth of the damaged layer formattinru_RU
dc.titleDepth Measurement of Nanoscale Damage to the Surface of Silicon Wafers in the Production of Submicron Integrated Microcircuits by Auger Spectroscopy Methodru_RU
dc.typeСтатьяru_RU
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