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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/28808
Title: Depth Measurement of Nanoscale Damage to the Surface of Silicon Wafers in the Production of Submicron Integrated Microcircuits by Auger Spectroscopy Method
Authors: Solodukha, V. A.
Shvedov, S. V.
Chyhir, R. R.
Petlitsky, A. N.
Keywords: публикации ученых;polished wafers;damaged layer;Auger electron;depth of the damaged layer formattin
Issue Date: 2017
Publisher: Sumy Sumy State University, Zatoka, Ukraine
Citation: Depth Measurement of Nanoscale Damage to the Surface of Silicon Wafers in the Production of Submicron Integrated Microcircuits by Auger Spectroscopy Method / V. A. Solodukha and other // Proceedings of the 2017 IEEE 7th International Conference on Nanomaterials: Applications & Properties (NAP-2017)(September 10 – 15, 2017). – Zatoka: Sumy Sumy State University, 2017. – Р. 1 – 4.
Abstract: The proposed method of depth control of the damaged layer of the polished wafers, based on application of Auger spectroscopy with the precision sputtering of the surface silicon layers and registration of the Auger electrons yield intensity from the wafer surface. The method makes it possible to perform the efficient depth control of the damaged layer and thus ensures the reliable control under the production conditions. The depth measurement range of the damaged layer constitutes 0,001–1 um. Resolution by depth is 1 nm.
URI: https://libeldoc.bsuir.by/handle/123456789/28808
Appears in Collections:Публикации в зарубежных изданиях

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