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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/28963
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dc.contributor.authorNigerish, K.-
dc.contributor.authorMikhalik, M.-
dc.contributor.authorKovalchuk, N.-
dc.contributor.authorKomissarov, I. V.-
dc.date.accessioned2018-01-05T07:28:05Z-
dc.date.available2018-01-05T07:28:05Z-
dc.date.issued2017-
dc.identifier.citationThe excitation power dependence of the Raman G and 2D peaks of suspended graphene grown by chemical vapor deposition / K. Nigerish and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 55 - 58.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/28963-
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectthe excitation power dependenceru_RU
dc.subjectsuspended grapheneru_RU
dc.subjectchemical vapor depositionru_RU
dc.titleThe excitation power dependence of the Raman G and 2D peaks of suspended graphene grown by chemical vapor depositionru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2017

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