DC Field | Value | Language |
dc.contributor.author | Nigerish, K. | - |
dc.contributor.author | Mikhalik, M. | - |
dc.contributor.author | Kovalchuk, N. | - |
dc.contributor.author | Komissarov, I. V. | - |
dc.date.accessioned | 2018-01-05T07:28:05Z | - |
dc.date.available | 2018-01-05T07:28:05Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | The excitation power dependence of the Raman G and 2D peaks of suspended graphene grown by chemical vapor deposition / K. Nigerish and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 55 - 58. | ru_RU |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/28963 | - |
dc.language.iso | en | ru_RU |
dc.publisher | БГУИР | ru_RU |
dc.subject | материалы конференций | ru_RU |
dc.subject | the excitation power dependence | ru_RU |
dc.subject | suspended graphene | ru_RU |
dc.subject | chemical vapor deposition | ru_RU |
dc.title | The excitation power dependence of the Raman G and 2D peaks of suspended graphene grown by chemical vapor deposition | ru_RU |
dc.type | Статья | ru_RU |
Appears in Collections: | NDTCS 2017
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