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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/28970
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dc.contributor.authorSadikhova, A.-
dc.contributor.authorKipshidze, G.-
dc.contributor.authorAliyeva, Y.-
dc.contributor.authorAhmedova, Sh.-
dc.contributor.authorAbdullayev, N.-
dc.date.accessioned2018-01-05T07:45:22Z-
dc.date.available2018-01-05T07:45:22Z-
dc.date.issued2017-
dc.identifier.citationUnrelaxed InAs1-xSbx alloys grown on compositionally graded buffers with molecular-beam epitaxy / A. Sadikhova and others // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 29 - 32.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/28970-
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectunrelaxed InAs1-xSbx alloysru_RU
dc.subjectcompositionally graded buffersru_RU
dc.subjectmolecular-beam epitaxyru_RU
dc.titleUnrelaxed InAs1-xSbx alloys grown on compositionally graded buffers with molecular-beam epitaxyru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2017

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