| DC Field | Value | Language |
|---|
| dc.contributor.author | Ivanova, Y. | - |
| dc.contributor.author | Zubkov, V. | - |
| dc.date.accessioned | 2018-01-08T12:42:28Z | - |
| dc.date.available | 2018-01-08T12:42:28Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Ivanova, Y. The study of contribution of thermionic and tunnel components in heterostructures with a single quantum well InGaAs/GaAs by admittance methods / Y. Ivanova, V. Zubkov // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 120 - 123. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/29010 | - |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | contribution of thermionic components | ru_RU |
| dc.subject | tunnel components | ru_RU |
| dc.subject | heterostructures | ru_RU |
| dc.subject | single quantum well InGaAs/GaAs | ru_RU |
| dc.subject | admittance methods | ru_RU |
| dc.title | The study of contribution of thermionic and tunnel components in heterostructures with a single quantum well InGaAs/GaAs by admittance methods | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2017
|
