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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/29059
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dc.contributor.authorDao Dinh Ha-
dc.date.accessioned2018-01-09T12:27:53Z-
dc.date.available2018-01-09T12:27:53Z-
dc.date.issued2017-
dc.identifier.citationDao Dinh Ha. Approaches to implementation of the ion-sensitive field-effect transistor compact models / Dao Dinh Ha // Nano-design, technology, computer simulations : proceedings of 17th International workshop on new approaches to high –tech (26-27 October, 2017). – Minsk : BSUIR, 2017. – С. 158 - 161.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/29059-
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjection-sensitive field-effect transistor compact modelsru_RU
dc.titleApproaches to implementation of the ion-sensitive field-effect transistor compact modelsru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2017

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