The influence of microwave CF4 plasma activation on the characteristics of reactive ion etching of mono-Si

Abstract

The experiments have shown that microwave preliminary ionization of the plasma-forming gas increases the rate of the reactive ion etching of monocrystalline silicon (mono-Si) by four and more times in comparison with the etching process without it. It is established that the mode of plasma activation (the power of microwave discharge) and the value of plasma-forming gas pressure significantly affect the characteristics of mono-Si surface micro-roughness obtained in the result of etching.