| DC Field | Value | Language |
|---|
| dc.contributor.author | Ходарина, Л. П. | - |
| dc.contributor.author | Зеленин, В. А. | - |
| dc.contributor.author | Гурский, Л. И. | - |
| dc.date.accessioned | 2018-05-28T08:43:04Z | - |
| dc.date.available | 2018-05-28T08:43:04Z | - |
| dc.date.issued | 2009 | - |
| dc.identifier.citation | Ходарина, Л. П. Формирование ямок на поверхности Si (111) при термообработке структур Si/Al = Formation of dimples on the Si (111) surface during heat treatment of Si/Al structures / Л. П. Ходарина, В. А. Зеленин, Л. И. Гурский // Доклады БГУИР. – 2009. – № 3 (41). – С. 73–78. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/31650 | - |
| dc.description.abstract | The paper discusses the mechanisms responsible for formation of dimples on the Si (111) surface during heat treatment of Si/Al structures. The determination is made of the major regularities of their formation in actual structures. | ru_RU |
| dc.language.iso | ru | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | доклады БГУИР | ru_RU |
| dc.title | Формирование ямок на поверхности Si (111) при термообработке структур Si/Al | ru_RU |
| dc.title.alternative | Formation of dimples on the Si (111) surface during heat treatment of Si/Al structures | ru_RU |
| dc.type | Статья | ru_RU |
| local.description.annotation | The mechanisms responsible for formation of dimples on the Si (111) surface during heat
treatment of Si/Al structures are discussed. The determination is made of the major regularities of their
formation in actual structures. | - |
| Appears in Collections: | №3 (41)
|
