https://libeldoc.bsuir.by/handle/123456789/33587
Title: | Possibility of determining the graphene doping level using Raman spectra |
Authors: | Kovalchuk, N. G. Nigerish, K. A. Mikhalik, M. M. Kargin, N. I. Komissarov, I. V. Prischepa, S. L. |
Keywords: | материалы конференций;graphene doping;Raman spectrum;chemical vapor deposition |
Issue Date: | 2018 |
Publisher: | Springer Science+Business Media |
Citation: | Possibility of determining the graphene doping level using Raman spectra / N. G. Kovalchuk [et al.] // Journal of Applied Spectroscopy. – 2018. – Vol. 84, No. 6. – P. 995–998. |
Abstract: | Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO2/Si substrate using various transfer and polymer removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-behaved linear functions with slopes of ~2.2 that suggested the existence of biaxial stress in the graphene. It was discovered that the doping in the samples changed. |
URI: | https://libeldoc.bsuir.by/handle/123456789/33587 |
DOI: | https://doi.org/10.1007/s10812-018-0576-x |
Appears in Collections: | Публикации в зарубежных изданиях |
File | Description | Size | Format | |
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Kovalchuk_Possibility.pdf | 65.92 kB | Adobe PDF | View/Open |
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