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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33587
Title: Possibility of determining the graphene doping level using Raman spectra
Authors: Kovalchuk, N. G.
Nigerish, K. A.
Mikhalik, M. M.
Kargin, N. I.
Komissarov, I. V.
Prischepa, S. L.
Прищепа, С. Л.
Keywords: материалы конференций
graphene doping
Raman spectrum
chemical vapor deposition
Issue Date: 2018
Publisher: Springer Science+Business Media, LLC
Citation: Possibility of determining the graphene doping level using Raman spectra / N. G. Kovalchuk and others // Journal of Applied Spectroscopy. - 2018. - Vol. 84, No. 6. - Pр. 995 - 998. - DOI : https://doi.org/10.1007/s10812-018-0576-x.
Abstract: Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO2/Si substrate using various transfer and polymer removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-behaved linear functions with slopes of ~2.2 that suggested the existence of biaxial stress in the graphene. It was discovered that the doping in the samples changed.
URI: https://libeldoc.bsuir.by/handle/123456789/33587
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