|Title:||Possibility of determining the graphene doping level using Raman spectra|
|Authors:||Kovalchuk, N. G.|
Nigerish, K. A.
Mikhalik, M. M.
Kargin, N. I.
Komissarov, I. V.
Prischepa, S. L.
Прищепа, С. Л.
chemical vapor deposition
|Publisher:||Springer Science+Business Media, LLC|
|Citation:||Possibility of determining the graphene doping level using Raman spectra / N. G. Kovalchuk and others // Journal of Applied Spectroscopy. - 2018. - Vol. 84, No. 6. - Pр. 995 - 998. - DOI : https://doi.org/10.1007/s10812-018-0576-x.|
|Abstract:||Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO2/Si substrate using various transfer and polymer removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-behaved linear functions with slopes of ~2.2 that suggested the existence of biaxial stress in the graphene. It was discovered that the doping in the samples changed.|
|Appears in Collections:||Публикации в зарубежных изданиях|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.