Skip navigation
Please use this identifier to cite or link to this item:
Title: Possibility of determining the graphene doping level using Raman spectra
Authors: Kovalchuk, N. G.
Nigerish, K. A.
Mikhalik, M. M.
Kargin, N. I.
Komissarov, I. V.
Prischepa, S. L.
Прищепа, С. Л.
Keywords: материалы конференций
graphene doping
Raman spectrum
chemical vapor deposition
Issue Date: 2018
Publisher: Springer Science+Business Media, LLC
Citation: Possibility of determining the graphene doping level using Raman spectra / N. G. Kovalchuk and others // Journal of Applied Spectroscopy. - 2018. - Vol. 84, No. 6. - Pр. 995 - 998. - DOI :
Abstract: Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO2/Si substrate using various transfer and polymer removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-behaved linear functions with slopes of ~2.2 that suggested the existence of biaxial stress in the graphene. It was discovered that the doping in the samples changed.
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Kovalchuk_Possibility.pdf65,92 kBAdobe PDFView/Open
Show full item record

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.