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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33879
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dc.contributor.authorPodryabinkin, D. A.-
dc.contributor.authorDanilyuk, A. L.-
dc.contributor.authorДанилюк, А. Л.-
dc.contributor.authorПодрябинкин, Д. А.-
dc.date.accessioned2018-12-14T09:35:15Z-
dc.date.available2018-12-14T09:35:15Z-
dc.date.issued2018-
dc.identifier.citationPodryabinkin, D. A. Breakdown and conductivity switching in nanosized hafnium dioxide / D. A. Podryabinkin, A. L. Danilyuk // Materials physics and mechanics (MPM). – 2018. – No 1, Vol. 39. – P. 68 – 74. – DOI: 10.18720/MPM.3912018_11.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/33879-
dc.description.abstractAtomic migration and electronic switching of bi-stable centers in conducting filaments formed in nanooxide based resistive random access memory (RRAM) cells are modeled and analyzed as competitive mechanisms determining their operation frequency. They are mediated by the filament growth dynamics. Atomic migration is responsible for a slow change of the filament resistivity with typical switching times in the millisecond range. Fast switching with the shortest nanosecond delay can be achieved using bi-stable electronic centers in the filaments. Possible configurations of such centers are discussed.ru_RU
dc.language.isoenru_RU
dc.publisherИнститут проблем машиноведения РАН, РФru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectconductivity switchingru_RU
dc.subjectmemory cellru_RU
dc.subjectnanooxideru_RU
dc.titleBreakdown and conductivity switching in nanosized hafnium dioxideru_RU
dc.typeСтатьяru_RU
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