Influence of a constant magnetic field on the uniformity of plasma generated by planar ICP source

Abstract

Inductively coupled plasma (ICP) sources are widely used in the technologies of plasma chemical etching and deposition for low-temperature high-density plasma generation at pressures of 0.05-10 Pa. It is possible to improve plasma treatment uniformity by simultaneous decrease in the operating pressure and increase in the surface being treated by means of ICP source’s antenna system geometry, constant gas supply into plasma generation area, and also by means of an external constant magnetic field in a process reactor. In this work it is introduced a research of the influence of a constant magnetic field distribution in a plasma treatment process reactor on the basis of a flat ICP source 200 mm in diameter with a four-spiral helical antenna system, having a discharge gap 55 cm in length, on plasma concentration distribution; a magnetic trap configuration wherein plasma uniformity improves from.