| DC Field | Value | Language |
|---|
| dc.contributor.author | Tresh, A. M. | - |
| dc.date.accessioned | 2015-03-09T12:23:58Z | |
| dc.date.accessioned | 2017-07-19T08:28:21Z | - |
| dc.date.available | 2015-03-09T12:23:58Z | |
| dc.date.available | 2017-07-19T08:28:21Z | - |
| dc.date.issued | 2012 | - |
| dc.identifier.citation | Tresh, A. M. The basic electrical characteristics of silicon cells / А. М. Tresh // Информационные технологии и системы 2012 (ИТС 2012) : материалы международной научной конференции, БГУИР, Минск, Беларусь, 24 октября 2012 г. = Information Technologies and Systems 2012 (ITS 2012) : Proceeding of The International Conference, BSUIR, Minsk, 24th October 2012 / редкол. : Л. Ю. Шилин [и др.]. – Минск : БГУИР, 2012. – C. 28–29. | ru_RU |
| dc.identifier.isbn | 978-985-488-926-9 | - |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/3575 | - |
| dc.description.abstract | The basic electrical characteristics of silicon cells have been fully discussed in this paper. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | silicon cells | ru_RU |
| dc.subject | photovoltaic receiver | ru_RU |
| dc.subject | cell series resistance | ru_RU |
| dc.subject | кремниевые элементы | ru_RU |
| dc.subject | электрические характеристики | ru_RU |
| dc.title | The basic electrical characteristics of silicon cells | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | ИТС 2012
|
