|Title:||Direct Patterning of Nitrogen-Doped CVD Graphene Based Microstructures for Charge Carrier Measurements Employing Femtosecond Laser Ablation|
|Authors:||Kovalchuk, N. G.|
Niherysh, K. A.
Felsharuk, A. V.
Svito, I. A.
Kargin, N. I.
Komissarov, I. V.
Prischepa, S. L.
|Keywords:||публикации ученых;nitrogen doped graphene;femtosecond laser ablation;Hall resistance;charge carrier concentration|
|Publisher:||IOP Science. Holland|
|Citation:||Direct Patterning of Nitrogen-Doped CVD Graphene Based Microstructures for Charge Carrier Measurements Employing Femtosecond Laser Ablation / N. G. Kovalchuk [and others] // Journal of Physics D: Applied Physics. – 2019. – Vol. 52., No. 30. – P. 30LT01. – DOI: 10.1088/1361-6463/ab1c4b.|
|Abstract:||Chemical vapor deposited nitrogen-doped graphene, transferred on SiO2/Si substrate, was selectively patterned by femtosecond laser ablation for the formation of the topology dedicated to charge carrier measurements. Ultrashort 1030 nm wavelength Yb:KGW fs-laser pulses of 22 μJ energy,14 mJ cm−2 fluence, 96% pulse overlap, and a scanning speed of 100 mm s−1, were found to be the optimum regime for the high throughput microstructure ablation in graphene, without surface damage of the substrate in the employed fs-laser micromachining workstation. Optical scanning electron, atomic force microscopy, as well as Raman spectroscopy, were applied to clarify the intensive fs-laser light irradiation effects on graphene and the substrate, and to also verify the quality of the graphene removal. Measurements of magnetotransport properties of the fs-laser ablated nitrogen-doped graphene microstructure in the Hall configuration enabled the determination of the type, as well as concentration of charge carriers in a wide range of temperatures.|
|Appears in Collections:||Публикации в зарубежных изданиях|
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