https://libeldoc.bsuir.by/handle/123456789/38382
Title: | Plasma assisted-MBE of GaN and AlN on graphene buffer layers |
Authors: | Borisenko, D. P. Gusev, A. S. Kargin, N. I. Komissarov, I. V. Kovalchuk, N. G. Labunov, V. A. |
Keywords: | публикации ученых;graphene buffer layers;Plasma assisted |
Issue Date: | 2019 |
Publisher: | Institute of Physics IOP Publishing |
Citation: | Plasma assisted-MBE of GaN and AlN on graphene buffer layers / Borisenko D. P. [and others] // Japanese Journal of Applied Physics. – 2019. – Vol. 58. – P. 8. – DOI: doi.org/10.7567/1347-4065/ab124b. |
Abstract: | The possibility of using chemical vapor deposition (CVD) graphene as a 2D buffer layer for epitaxial growth of III-nitrides by plasma assisted-MBE on amorphous substrates (SiO2 prepared by thermal oxidation of Si wafer) was investigated. The comparative study of graphene-coated parts of the wafers and the parts without graphene was carried out by scanning electron microscopy and X-ray diffractometry. It was shown that epitaxial GaN and AlN films with close to 2D surface morphology can be obtained by plasma assisted-MBE on amorphous SiO2 substrates with a multilayer graphene buffer using the HT AlN nucleation layer. |
URI: | https://libeldoc.bsuir.by/handle/123456789/38382 |
Appears in Collections: | Публикации в зарубежных изданиях |
File | Description | Size | Format | |
---|---|---|---|---|
Borisenko_Plasma.pdf | 1.08 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.