Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/38516
Title: Porous Silicon for Accumulation and Generation of Hydrogen
Authors: Dolbik, A. V.
Lazarouk, S. K.
Leshok, A. A.
Keywords: публикации ученых;porous Si;electrochemical anodization;hydrogen
Issue Date: 2019
Publisher: World Scientic Publishing Company
Citation: Dolbik, A. V. Porous Silicon for Accumulation and Generation of Hydrogen / A. V. Dolbik, S. K. Lazarouk, A. A. Leshok // International Journal of Nanoscience. – 2019. – Vol. 18, No. 3 – 4. – P. 1940089 (1-4). – DOI: https://doi.org/10.1142/S0219581X19400891.
Abstract: Porous silicon layers have been formed by electrochemical anodization of p- and n-type Si substrates. The volume of hydrogen desorbed from the surface of porous silicon after the anodic treatment was measured to be as large as 4 wt.%. Regeneration of hydrogen can be achieved by porous silicon reanodization.
URI: https://libeldoc.bsuir.by/handle/123456789/38516
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Dolbik_Porous.pdf261.73 kBAdobe PDFView/Open
Show full item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.