Thermal conductivity influence on failures of semiconductor IСs under powerful EMP action

Abstract

Thermal transfer in semiconductor integrated circuits under external HEMP action is considered. It is shown, only some thermal conductivity components influence on value of thermal gradients, which cause failures. The account of thermal conductivity dependence of substrate 1C on temperature has shown reduction of temperature magnitude of crystal heating. The hypothesis are also confirmed breakdown occurrence is possible already at lower initiated temperatures, than semiconductor melt temperature.