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Title: Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal
Authors: Makovskaya, T. I.
Danilyuk, A. L.
Krivosheeva, A. V.
Shaposhnikov, V. L.
Borisenko, V. E.
Маковская, Т. И.
Данилюк, А. Л.
Кривошеева, А. В.
Шапошников, В. Л.
Борисенко, В. Е.
Keywords: публикации ученых
two-dimensional (2D) crystal
transistor structure
Issue Date: 2020
Publisher: Springer, Германия
Citation: Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal / T. I. Makovskaya [et. al.] // Russian Microelectronics. – 2020. – Vol. 49, № 7. – P. 507–515. – DOI: 10.1134/S1063739720070069.
Abstract: Two-dimensional (2D) semiconductor crystals can be applied to further increase the efficiency and speed of field-effect transistors. Such transistors are free from some of the adverse effects present in the traditional MOS transistors when their size is reduced. In this study, the model of the transistor MOS structure with the channel made of a 2D-crystal is proposed and its charge properties are investigated. The numerical simulation of such characteristics is carried out within the range of variations of the electrophysical properties of 2D-crystals representative of MoSe2, WS2, WSe2, ZrSe2, HfSe2, and PtTe2. The self-consistent correlation between electrophysical parameters of the structure via the chemical potential is found, and the effect of the potential of the field electrode and the gate insulator’s capacitance on them is demonstrated. The calculations of the steepness of the transfer characteristic and the voltage gain of such a transistor structure demonstrate that, for the channel made from transition metal dichalcogenides (TMD) with the forbidden gap band falling in the range 0.25–2.1 eV, the magnitudes of these parameters can attain 0.1 mA/V and 1000, respectively.
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