Skip navigation
Please use this identifier to cite or link to this item:
Title: Band Gap of (In2S3)x(AgIn5S8)1-x Single-Crystal Alloys
Authors: Bodnar, I. V.
Feschenko, A. A.
Khoroshko, V. V.
Keywords: публикации ученых;single crystals;crystal structure;band gap
Issue Date: 2020
Publisher: Springer
Citation: Bodnar, I. V. Band Gap of (In2S3)x(AgIn5S8)1-x Single-Crystal Alloys / I. V. Bodnar, A. A. Feschenko, V. V. Khoroshko // Semiconductors. – 2020. – Vol. 54, №.12. – P. 1611–1615. – DOI: 10.1134/S1063782620120039.
Abstract: In2S3, AgIn5S8, and (In2S3)x(AgIn5S8)1 – x-alloy single crystals are grown by the Bridgman method. The composition and structure of the crystals are determined. It is established that both the initial compounds and their alloys crystalize with the formation of the cubic spinel structure. The unit-cell parameters of the single crystals are calculated, and the dependences of these parameters on the alloy composition are constructed. It is shown that, in the system, Vegard’s law is satisfied. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied at room temperature, and the band gap (Eg) is determined. It is shown that Eg varies with the composition parameter x, with some deviation from a linear dependence.
Appears in Collections:Публикации в зарубежных изданиях

Files in This Item:
File Description SizeFormat 
Bodnar_Band.pdf454.99 kBAdobe PDFView/Open
Show full item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.