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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45789
Title: Low temperature magnetoresistance in silicon doped by antimony
Authors: Danilyuk, A. L.
Trafimenko, A. G.
Prischepa, S. L.
Keywords: материалы конференций;conference proceedings;low temperature magnetoresistance;silicon
Issue Date: 2021
Publisher: БГУИР
Citation: Danilyuk, A. L. Low temperature magnetoresistance in silicon doped by antimony / A. L. Danilyuk, A. G. Trafimenko, S. L. Prischepa // Nano-Desing, Tehnology, Computer Simulations =Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 25–27.
Abstract: Magnetoresistance and magnetotransport in silicon and silicon-based nanostructures has great impact on the development of silicon spintronics and quantum information processing. This is due to the importance of silicon technology and by the non-triviality of spin-dependent processes in silicon doped with various impurities. Within this framework, the investigations of the non-linear electrical effects are also relevant. Their implementation along with the spin dependent processes can pave the way to a novel energy efficient information processing devices based on silicon technology.
URI: https://libeldoc.bsuir.by/handle/123456789/45789
Appears in Collections:NDTCS 2021

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