Low temperature magnetoresistance in silicon doped by antimony

Abstract

Magnetoresistance and magnetotransport in silicon and silicon-based nanostructures has great impact on the development of silicon spintronics and quantum information processing. This is due to the importance of silicon technology and by the non-triviality of spin-dependent processes in silicon doped with various impurities. Within this framework, the investigations of the non-linear electrical effects are also relevant. Their implementation along with the spin dependent processes can pave the way to a novel energy efficient information processing devices based on silicon technology.