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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45841
Title: Charging properties of the silicon / zinc oxide nanoparticle heterostructure
Authors: Kuraptsova, A. A.
Danilyuk, A. L.
Keywords: материалы конференций;conference proceedings;silicon;zinc oxide
Issue Date: 2021
Publisher: БГУИР, РБ
Citation: Kuraptsova, A. A. Charging properties of the silicon / zinc oxide nanoparticle heterostructure / A. A. Kuraptsova, A. L. Danilyuk // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 16–18.
Abstract: Zinc oxide ZnO is a semiconductor with a direct band gap of 3.37 eV at room temperature, which makes ZnO a promising material for use in many areas, such as photocatalytic water and air purification, photocatalytic water splitting, optoelectronics, gas sensors, gas sensors. Zinc oxide also has a number of advantages over other materials used in photocatalysis: low cost, non-toxicity, low reflectance in the solar spectrum, the ability to create low-dimensional structures using chemical etching (amphotericity), resistance to high-energy radiation, flexible changing of electrophysical and optical properties by doping it with various impurities and controlling the conditions for its production. The implementation of p-type ZnO is difficult because pure ZnO with a wurtzite structure naturally occurs in the form of an n-type semiconductor. It is caused by oxygen vacancies, excess zinc, and the presence of hydrogen atoms.
URI: https://libeldoc.bsuir.by/handle/123456789/45841
Appears in Collections:NDTCS 2021

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