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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45872
Title: The comparative analysis of technological regimes for improving the electrical insulation strength of double-sided alumina bases with vias
Authors: Shimanovich, D. L.
Tishkevich, D.
Keywords: материалы конференций;conference proceedings;electrical insulation strength;power multichip modules
Issue Date: 2021
Publisher: БГУИР, РБ
Citation: Shimanovich, D. The comparative analysis of technological regimes for improving the electrical insulation strength of double-sided alumina bases with vias / D. Shimanovich, D. Tishkevich // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 70–71.
Abstract: The aim of the presented research is developing of the methods and techniques using optimized technological regimes to improve the electrical insulation strength of anodic Al2O3 in vias of double-sided alumina bases for potential use in power multichip modules. Preliminary experimental studies of fabricated alumina bases with vias matrices showed that in the process of electrochemical anodization at the junction of horizontal and vertical surfaces in vias, microcracks inevitably appeared due to anodizing fronts competing in different directions, restructuring of the porous structure and arising mechanical stresses, even if on the continuous surface of alumina bases, microcracks were completely absent.
URI: https://libeldoc.bsuir.by/handle/123456789/45872
Appears in Collections:NDTCS 2021

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