| DC Field | Value | Language |
|---|
| dc.contributor.author | Volcheck, V. S. | - |
| dc.contributor.author | Lovshenko, I. Yu. | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.date.accessioned | 2021-11-09T07:34:08Z | - |
| dc.date.available | 2021-11-09T07:34:08Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Volcheck, V. Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system / V. Volcheck, I. Lovshenko, V. Stempitsky // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 63–64. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/45886 | - |
| dc.description.abstract | This paper is dedicated to the design optimization of the GaN HFET with a graphene heat-removal system
enhanced by a trench in the passivation layer filled by diamond. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | conference proceedings | ru_RU |
| dc.subject | design optimization | ru_RU |
| dc.subject | transistors | ru_RU |
| dc.subject | graphene heat-removal system | ru_RU |
| dc.title | Design optimization of the gallium nitride heterostructure field-effect transistor with a graphene heat-removal system | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2021
|
