|Title:||Correlation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique|
|Authors:||Niherysh, K. A.|
Mikhalik, M. M.
Dobrokhotov, P. L.
Prischepa, S. L.
Komissarov, I. V.
|Keywords:||публикации ученых;topological insulator;graphene;thin films;biaxial strain;Raman spectroscopy|
|Publisher:||Royal Society of Chemistry, Великобритания|
|Citation:||Correlation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique / K. A. Niherysh [et. al.] // Nanoscale Advances. – 2021. – Vol. 3. – № 22. – P. 6395–6402. – DOI : 10.1039/d1na00390a.|
|Abstract:||In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi2Se3 thin films of various (3–400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2g) and out-of-plane (A21g) Raman mode positions. The algorithm of phonon deformation potential (PDP) calculation based on the proposed strain analysis for the 3 nm thick Bi2Se3 film deposited on the graphene substrate, where the strain is considered to be coherent across the thickness, is demonstrated. The PDPs for biaxial in-plane strain of the Bi2Se3 3 nm film in in-plane and out-of-plane modes are equal to -7.64 cm-1/% and -6.97 cm-1/%, respectively.|
|Appears in Collections:||Публикации в зарубежных изданиях|
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