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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46441
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dc.contributor.authorKazarkin, B. A.-
dc.contributor.authorStepanov, A. A.-
dc.contributor.authorSmirnov, A. G.-
dc.contributor.authorShiripov, V.-
dc.contributor.authorKhokhlov, E. A.-
dc.contributor.authorKsendzov, A.-
dc.contributor.authorКазаркин, Б. А.-
dc.contributor.authorСтепанов, А. А.-
dc.contributor.authorСмирнов, А. Г.-
dc.date.accessioned2021-12-23T07:52:21Z-
dc.date.available2021-12-23T07:52:21Z-
dc.date.issued2019-
dc.identifier.citationInGaZnO based TFT structures for active matrix addressing / B. Kazarkin [et al.] // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 88.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/46441-
dc.description.abstractWe present the results on a TFT active-matrix structure based on the InGaZnO (IGZO) semiconductor compound formed by the magnetron plasma-chemical deposition method. Their structural, morphological and electro physical properties were studied. InGaZnO is an amorphous n-type transparent conductive oxide. The main advantage of IGZO over organic semiconductors is the stability of their properties and the significantly higher mobility of charge carriers. Thus, the balance of the required properties inherent in IGZO makes it a promising material for optoelectronics, photonics and display technology.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectsemiconductor compoundsru_RU
dc.subjectactive matricesru_RU
dc.subjectdisplay technologyru_RU
dc.titleInGaZnO based TFT structures for active matrix addressingru_RU
dc.typeСтатьяru_RU
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