Memory-in-pixel circuit with low temperature poly-Si and oxide TFTs

Abstract

Memory-in-pixel (MIP) circuit has been studied for years to reduce power consumption of display products. Displays with MIP circuit can reduce power consumption because of their much lower frame rate than that of conventional displays using memory characteristics. Meanwhile, commercial display products have begun to introduce display circuits using low temperature poly-silicon and oxide (LTPO) TFTs to improve the performance and to use an advantage of extremely low leakage current of oxide TFTs. In this paper, we propose a new MIP circuit to achieve low power consumption as well as high reliability using LTPO TFTs.