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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46449
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dc.contributor.authorYong-Seog Kim-
dc.contributor.authorSun-Куо Kim-
dc.date.accessioned2021-12-23T08:32:52Z-
dc.date.available2021-12-23T08:32:52Z-
dc.date.issued2019-
dc.identifier.citationYong-Seog Kim. Theoretical analysis of charge carrier injection and transport in QLED layers / Yong-Seog Kim, Sun-Куо Kim // Eurodisplay 2019 : Book of abstracts of International Conference, Minsk, September 16-20, 2019 / Society for Information Display, Belarusian State University of Informatics and Radioelectronics ; ed.: V. A. Bogush [et al.]. – Minsk, 2019. – P. 52.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/46449-
dc.description.abstractA theoretical analysis on carrier injection and transport through layers of QLED device was attempted assuming dynamic equilibrium of trapping and detrapping charge carriers. Assuming traps in exponential or Gaussian energy distribution, the effect of parameters on the current-voltage relationship for the device was investigated. The energy level and distribution of charge traps, Schottky barrier, and the ratio of de-trapping rate constant to the trapping rate constant were found to affect the current-voltage relationship significantly in the charge transport layer. The results suggest that the parameters must be modulated simultaneously in order to achieve a charge balance in the QD layer of the QLED device.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectQLED deviceru_RU
dc.subjectSchottky barrierru_RU
dc.titleTheoretical analysis of charge carrier injection and transport in QLED layersru_RU
dc.typeСтатьяru_RU
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