| DC Field | Value | Language |
|---|
| dc.contributor.author | Vorobjova, A. I. | - |
| dc.contributor.author | Labunov, V. A. | - |
| dc.contributor.author | Outkina, E. A. | - |
| dc.contributor.author | Grapov, D. V. | - |
| dc.date.accessioned | 2022-01-24T12:41:13Z | - |
| dc.date.available | 2022-01-24T12:41:13Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Metallization of Vias in Silicon Wafers to Produce Three-Dimensional Microstructures / A. I. Vorobjova [et al.] // Russian Microelectronics. – 2021. – Vol. 50, № 1. – P. 8–17. – DOI : 10.1134/S1063739721010108. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/46591 | - |
| dc.description.abstract | The processes of electrochemical deposition into a matrix of vertical vias of different diameters
(500–2000 nm) in Si/SiO2 substrates with a TiN barrier layer at the bottom of the holes are studied. Morpho-
logical studies of the metal in the holes show that the structure of copper clusters is rather uniform and is
formed from crystallites of ~30 to 50 nm. Repeatability and stability with a homogeneous structure and with
holes filled 100% by Cu determine the prospect of using the Si/SiO2/Cu system as a basic element for creating three-dimensional micro- and nanostructures, as well as for the 3D assembly of IC crystals. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Pleiades Publishing | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | electrochemical deposition | ru_RU |
| dc.subject | copper | ru_RU |
| dc.subject | barrier layer | ru_RU |
| dc.subject | three-dimensional assembly of crystals | ru_RU |
| dc.subject | metallization | ru_RU |
| dc.subject | morphological characteristics | ru_RU |
| dc.title | Metallization of Vias in Silicon Wafers to Produce Three-Dimensional Microstructures | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
