| DC Field | Value | Language |
|---|
| dc.contributor.author | Lovshenko, I. Yu. | - |
| dc.contributor.author | Voronov, A. Yu. | - |
| dc.contributor.author | Roshchenko, P. S. | - |
| dc.contributor.author | Ternov, R. E. | - |
| dc.contributor.author | Galkin, Y. D. | - |
| dc.contributor.author | Kunts, A. V. | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.contributor.author | Jinshun Bi | - |
| dc.date.accessioned | 2022-02-02T07:57:45Z | - |
| dc.date.available | 2022-02-02T07:57:45Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs / Lovshenko I. Yu. [et al.] // Доклады БГУИР. – 2021. – № 19(8). – С. 81–86. – DOI : http://dx.doi.org/10.35596/1729-7648-2021-19-8-81-86. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/46650 | - |
| dc.description.abstract | The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | доклады БГУИР | ru_RU |
| dc.subject | HEMT | ru_RU |
| dc.subject | GaAs | ru_RU |
| dc.subject | proton fluence | ru_RU |
| dc.subject | displacement effects | ru_RU |
| dc.subject | nonionizing energy loss | ru_RU |
| dc.subject | simulation | ru_RU |
| dc.title | The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | № 19(8)
|
