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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46656
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dc.contributor.authorVorsin, N. N.-
dc.contributor.authorGladyshchuk, A. A.-
dc.contributor.authorKushner, T. L.-
dc.contributor.authorTarasiuk, N. P.-
dc.contributor.authorChugunov, S. V.-
dc.contributor.authorBorushko, M. V.-
dc.date.accessioned2022-02-02T08:52:09Z-
dc.date.available2022-02-02T08:52:09Z-
dc.date.issued2021-
dc.identifier.citationModeling AlGaN p-i-n photodiodes / Vorsin N. N. [et al.] // Доклады БГУИР. – 2021. – № 19(8). – С. 50–57. – DOI : http://dx.doi.org/10.35596/1729-7648-2021-19-8-50-57.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/46656-
dc.description.abstractTernary AlGaN alloys with a band gap of 3.4 to 6.2 eV are very promising for photodetectors in the UV wavelength range. Using the COMSOL MULTIPHYSICS software based on AlGaN, a p-i-n photodiode model was developed, including its I–V characteristic, spectral sensitivity of the received radiation, absorption coefficient as a function of the aluminum fraction and the depletion layer thickness. To calculate the process of interaction of a semiconductor with EM radiation, we used a model based on the use of an element of the transition matrix through the carrier lifetime during spontaneous recombination. In this case, the peak sensitivity of the photodiode is from 0.08 to 0.18 A/W at wavelengths of 0.2–0.33 µm. This is in line with experimental results taken from the relevant literature.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectдоклады БГУИРru_RU
dc.subjectphotodetectorru_RU
dc.subjecttwo-dimensional modelru_RU
dc.subjectp-i-n structureru_RU
dc.subjectnumerical simulationsru_RU
dc.titleModeling AlGaN p-i-n photodiodesru_RU
dc.typeСтатьяru_RU
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