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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/49244
Title: Study of the Thermal Stability of Copper Contact Junctions in Si/SiO2 Substrates
Authors: Vorobjova, A. I.
Labunov, V. A.
Outkina, E. A.
Khodin, A. A.
Sycheva, O. A.
Ezovitova, T. I.
Keywords: публикации ученых;differential thermal analysis;scanning electron microscopy
Issue Date: 2022
Publisher: Springer
Citation: Study of the Thermal Stability of Copper Contact Junctions in Si/SiO2 Substrates / A. I. Vorobjova [et al.] // Russian Microelectronics. – 2022. – Vol. 51. – P. 282-294. – DOI : https://doi.org/10.1007/s00542-022-05335-3.
Abstract: The results of a comprehensive study of the structural- morphological and thermodynamic characteristics of the electrochemical precipitation of Cu in transition holes with a barrier layer of TiN in Si/SiO2 substrates by scanning electron microscopy (SEM) and differential thermal analysis (DTA) are presented. The temperature range that determines the heat resistance of copper (up to 750°C) and the temperature range (up to 886°C) that determines the thermal stability of the composite as a whole, as well as the ability to maintain the chemical composition and ordered structure at elevated temperatures, are found.
URI: https://libeldoc.bsuir.by/handle/123456789/49244
Appears in Collections:Публикации в зарубежных изданиях

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