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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/58757
Title: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors
Authors: Grevtsov, N.
Lopato, U.
Dolgyi, A.
Chubenko, E.
Bondarenko, V.
Smirnov, A.
Stsiapanau, A.
Dronov, A.
Gavrilin, I.
Gavrilov, S.
Keywords: публикации ученых;porous silicon;electrodeposition;nickel;indium;silicon-germanium
Issue Date: 2024
Publisher: Wiley
Citation: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors / N. Grevtsov, U. Lopato, A. Dolgyi [et al.] // SID Symposium Digest of Technical Papers : International Conference on Display Technology. – 2024. – Volume 55, № S1. – P. 231–236.
Abstract: A variety of micro- and nanocomposite materials based on electrochemically-acquired porous silicon are produced and evaluated in terms of their applicability to display technology. It is shown that porous silicon provides a versatile and well-adjustable template for filling with other materials, which can outright change its electrophysical parameters. While, in terms of display applications, porous silicon layers are mostly prominent for their photohiminescence not akin to monocrystalline silicon, this property can be additionally enhanced by employing a variety of electrochemical techniques to form metal deposits of certain shapes.
URI: https://libeldoc.bsuir.by/handle/123456789/58757
DOI: https://doi.org/10.1002/sdtp.17043
Appears in Collections:Публикации в зарубежных изданиях

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