DC Field | Value | Language |
dc.contributor.author | Yinchi Liu | - |
dc.contributor.author | Jining Yang | - |
dc.contributor.author | Hao Zhang | - |
dc.contributor.author | Golosov, D. A. | - |
dc.contributor.author | Chenjie Gu | - |
dc.contributor.author | Xiaohan Wu | - |
dc.contributor.author | Hongliang Lu | - |
dc.contributor.author | Lin Chen | - |
dc.contributor.author | Shijin Ding | - |
dc.contributor.author | Wenjun Liu | - |
dc.coverage.spatial | United States | en_US |
dc.date.accessioned | 2025-01-22T09:25:56Z | - |
dc.date.available | 2025-01-22T09:25:56Z | - |
dc.date.issued | 2024 | - |
dc.identifier.citation | Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Proces / Yinchi Liu, Jining Yang, Hao Zhang, D. A. Golosov [et al.] // ACS Applied Electronic Materials. – 2024. − Vol. 6, № 11. – P. 8507−8512. | en_US |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/58874 | - |
dc.description.abstract | In this work, the back-end of line (BEOL) compatible sub-6 nm Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 (HZO/ZrO2/HZO)stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO2/HZO stack annealed at 400°C shows a superior remanent polarization (2Pr) of 26.3 μC/cm2 under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO2 insertion. Moreover, the capacitor with a HZO/ZrO2/HZO stack also achieved an excellent endurance with a 2Pr of 27.1 μC/cm2 after 1011 cycles without breakdown and only ∼12% 2Pr degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO2/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Chemical Society | en_US |
dc.subject | публикации ученых | en_US |
dc.subject | ferroelectricity | en_US |
dc.subject | back-end of line | en_US |
dc.subject | low voltage equipment | en_US |
dc.title | Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Proces | en_US |
dc.type | Article | en_US |
dc.identifier.DOI | https://doi.org/10.1021/acsaelm.4c01745 | - |
Appears in Collections: | Публикации в зарубежных изданиях
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