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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/58874
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dc.contributor.authorYinchi Liu-
dc.contributor.authorJining Yang-
dc.contributor.authorHao Zhang-
dc.contributor.authorGolosov, D. A.-
dc.contributor.authorChenjie Gu-
dc.contributor.authorXiaohan Wu-
dc.contributor.authorHongliang Lu-
dc.contributor.authorLin Chen-
dc.contributor.authorShijin Ding-
dc.contributor.authorWenjun Liu-
dc.coverage.spatialUnited Statesen_US
dc.date.accessioned2025-01-22T09:25:56Z-
dc.date.available2025-01-22T09:25:56Z-
dc.date.issued2024-
dc.identifier.citationEnhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Proces / Yinchi Liu, Jining Yang, Hao Zhang, D. A. Golosov [et al.] // ACS Applied Electronic Materials. – 2024. − Vol. 6, № 11. – P. 8507−8512.en_US
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/58874-
dc.description.abstractIn this work, the back-end of line (BEOL) compatible sub-6 nm Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 (HZO/ZrO2/HZO)stack and the corresponding capacitors were fabricated. The capacitor with the sub-6 nm HZO/ZrO2/HZO stack annealed at 400°C shows a superior remanent polarization (2Pr) of 26.3 μC/cm2 under only ±1.25 V sweeping, while the conventional HZO film presents nonferroelectricity. The enhanced ferroelectricity stems from the increased ferroelectric phase proportion with ZrO2 insertion. Moreover, the capacitor with a HZO/ZrO2/HZO stack also achieved an excellent endurance with a 2Pr of 27.1 μC/cm2 after 1011 cycles without breakdown and only ∼12% 2Pr degradation at 85 °C. The robust reliability is ascribed to the suppressed generation of defects and domain pinning under the low operating voltage. The sub-6 nm HZO/ZrO2/HZO stack presents great potential for BEOL compatible nonvolatile memories in advanced process nodes.en_US
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.subjectпубликации ученыхen_US
dc.subjectferroelectricityen_US
dc.subjectback-end of lineen_US
dc.subjectlow voltage equipmenten_US
dc.titleEnhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf0.5Zr0.5O2/ZrO2/Hf0.5Zr0.5O2 Stack Film Compatible with BEOL Procesen_US
dc.typeArticleen_US
dc.identifier.DOIhttps://doi.org/10.1021/acsaelm.4c01745-
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